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Nonequilibrium Magnetic Domain Structures as a Function of Speed of Switching Process in Ni 80Fe20 Thin-Film Element

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5 Author(s)
Choi, B.C. ; Dept. of Phys. & Astron., Victoria Univ., BC ; Rudge, J. ; Freeman, M.R. ; Hong, Y.K.
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The influence of the speed of the switching process on the nonequilibrium domain structures in magnetic thin-film elements undergoing large angle rotations was studied with time-resolved scanning Kerr microscopy and numerical modelings. In particular, the systematic evolution of the spatiotemporal nature of the reversal of a small Ni80Fe20 element to progressively faster switching fields has been investigated. Generally, the magnetization evolves into a complex domain structure in nonequilibrium state when a magnetic element is excited by applying a short magnetic field pulse. The degree of complexity of the nonequilibrium domain structure is found to be a strong function of the speed of the switching process

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Magnetics, IEEE Transactions on  (Volume:43 ,  Issue: 1 )