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21-GHz-Bandwidth Germanium-on-Silicon Photodiode Using Thin SiGe Buffer Layers

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8 Author(s)
Zhihong Huang ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX ; Ning Kong ; Guo, X. ; Mingguo Liu
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Backside-illuminated germanium photodiodes fabricated on silicon substrate with two Si xGe1-x buffer layers are reported. At 1.3 mum, the responsivity was 0.62 A/W for reverse bias greater than 0.1 V. The 3-dB bandwidth was 21.5 GHz at 10-V reverse bias, achieving a bandwidth-efficiency product of 12.6 GHz

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:12 ,  Issue: 6 )