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Er-Doped Electro-Optical Memory Element for 1.5- \mu m Silicon Photonics

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9 Author(s)
Gregorkiewicz, T. ; Van der Waals-Zeeman Inst., Amsterdam Univ. ; Andreev, B.A. ; Forcales, M. ; Izeddin, I.
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Silicon photonics is rapidly growing and a number of Si-based active and passive components have recently been demonstrated. We demonstrate new functionality of Er-doped silicon: a memory effect in electroluminescence. This finding opens a prospect of necessary, and thus far not available, component for Si optoelectronics-a fully complimentary metal-oxide-semiconductor-compatible electro-optical converter with a memory function, operating in the technologically important 1.5-mum band. When developed and optimized, prospect applications could include optical intraand inter-chip connectors and volatile flash memory elements

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:12 ,  Issue: 6 )