Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

Electric field effect in Sm/sub 1-x/Ca/sub x/Ba/sub 2/Cu/sub 3/O/sub y/ bicrystal junctions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Dong, Z.W. ; Inst. for Microelectron. & Submicron Technol., Delft Univ. of Technol., Netherlands ; Matijasevic, V.C. ; Hadley, P. ; Shao, S.M.
more authors

A three terminal device was fabricated by depositing a thin film of Ca-doped SmBa/sub 2/Cu/sub 3/O/sub y/ on a bicrystal SrTiO/sub 3/ substrate and then structuring a gate over the resulting junction. The channel shows RSJ-like Josephson junction behavior. By applying a voltage to the gate, a large electric field effect was observed. The largest field effect was observed in films where 30% of the Sm was replaced by Ca. The critical current of the junction was modulated 23% by the application of an electric field of 5/spl times/10/sup 5/ V/cm. This electric field is about 100 times smaller than the electric field necessary for the field effects observed in homogeneous films. The sign of the field effect is consistent with that expected for a carrier-depleted grain boundary region.<>

Published in:

Applied Superconductivity, IEEE Transactions on  (Volume:5 ,  Issue: 2 )