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Temperature, bandgap-wavelength, and doping dependence off peak-gain coefficient parabolic model parameters for InGaAsP/InP semiconductor laser diodes

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1 Author(s)
Ghafoori-Shiraz, H. ; Dept. of Electron. & Electr. Eng., Birmingham Univ., UK

Varying temperature and doping types were used in both 1.3-μm- and 1.55-μm-band-wavelength laser diodes to determine the dependence of the parameters in a parabolic model on each of these factors. The parameters were calculated by using the least-mean-square method to fit the results of the exact solution. Results are presented in graphical and tabular form

Published in:

Lightwave Technology, Journal of  (Volume:6 ,  Issue: 4 )

Date of Publication:

Apr 1988

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