Temperature, bandgap-wavelength, and doping dependence off peak-gain coefficient parabolic model parameters for InGaAsP/InP semiconductor laser diodes

Varying temperature and doping types were used in both 1.3- mu m- and 1.55- mu m-band-wavelength laser diodes to determine the dependence of the parameters in a parabolic model on each of these factors. The parameters were calculated by using the least-mean-square method to fit the results of the exact solution. Results are presented in graphical and tabular form.<
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