Cart (Loading....) | Create Account
Close category search window
 

A 380 ps, 9.5 mW Josephson 4-Kbit RAM operated at a high bit yield

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Nagasawa, S. ; NEC Corp., Tsukuba, Japan ; Hashimoto, Y. ; Numata, H. ; Tahara, S.

We have developed a Josephson 4-Kbit RAM with improved component circuits and a device structure having two Nb wiring layers. A resistor coupled driver and sense circuit are improved to have wide operating margins. The fabrication process is simplified using bias sputtering, as a result, its reliability is increased. The RAM is composed of approximately 21000 Nb/AlO/sub x//Nb Josephson junctions, Mo resistors, Nb wirings, and SiO/sub 2/ insulators. Experimental results show a minimum access time of 380 ps and power dissipation of 9.5 mW. Maximum bit yield of 84% is obtained in minimum magnetic field of about 20 /spl mu/G. We confirm that most of fail bits are caused by trapped magnetic flux, and the RAM functions properly for 98% of the memory cells after measuring fail bit map several times.<>

Published in:

Applied Superconductivity, IEEE Transactions on  (Volume:5 ,  Issue: 2 )

Date of Publication:

June 1995

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.