Combined photodiode and high-T/sub c/ transition edge bolometer function on zirconia buffered silicon membranes

We report on a novel photoreceiver on silicon membranes, comprising both, an efficient photodiode or quantum detector and a transition edge bolometer on the same substrate material. The photodiode action of the device originates from the silicon substrate and delivers a fast optical response, with a limited sensitivity range at wavelength <1.1 /spl mu/m. The bolometer response, in contrast, is broadband, but rather slow with response times in the ms regime. The combination of both detectors thus represents a new optical receiver concept, and should be useful for a broad range of optical applications.<>