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Browse Journals & Magazines > Applied Superconductivity, IE ...> Volume:5 Issue:2 Help

Fabrication of submicron Nb/AlO/sub x/-Al/Nb tunnel junctions using focused ion beam implanted Nb patterning (FINP) technique

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5 Author(s)
Akaike, H. ; Dept. of Electron., Nagoya Univ., Japan ; Watanabe, T. ; Nagai, N. ; Fujimaki, A.
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We have successfully fabricated 0.2 /spl mu/m/sup 2/ Nb/AlO/sub x//Nb tunnel junctions using the focused-ion-beam implanted Nb patterning (FINP) technique for junction definition. The success was due to improvement of the edge profile of the counter electrode. The vertical edge profile was realized with the large etching selectivity of Ga implanted Nb over unimplanted Nb by controlling the reactive neutrals in the plasma. The critical current I/sub c/ and the quality parameter V/sub m/ of 0.2 /spl mu/m/sup 2/ junctions were 10.5 /spl mu/A and 11 mV, respectively. The R/sub sg//R/sub n/ was 12. The maximum to minimum spread in I/sub c/ of 60 series junctions with areas of 0.5 /spl mu/m/sup 2/ was /spl plusmn/10%.<>

Published in:
Applied Superconductivity, IEEE Transactions on  (Volume:5 ,  Issue: 2 )

Date of Publication: June 1995

Page(s):
2310 - 2313
ISSN :
1051-8223
INSPEC Accession Number:
5025766
Digital Object Identifier :
10.1109/77.403047
Product Type:
Journals & Magazines
Date of Current Version :
26 February 2004
Issue Date :
June 1995
Sponsored by :
The IEEE Council on Superconductivity

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