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Fabrication of submicron Nb/AlO/sub x/-Al/Nb tunnel junctions using focused ion beam implanted Nb patterning (FINP) technique

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5 Author(s)
H. Akaike ; Dept. of Electron., Nagoya Univ., Japan ; T. Watanabe ; N. Nagai ; A. Fujimaki
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We have successfully fabricated 0.2 /spl mu/m/sup 2/ Nb/AlO/sub x//Nb tunnel junctions using the focused-ion-beam implanted Nb patterning (FINP) technique for junction definition. The success was due to improvement of the edge profile of the counter electrode. The vertical edge profile was realized with the large etching selectivity of Ga implanted Nb over unimplanted Nb by controlling the reactive neutrals in the plasma. The critical current I/sub c/ and the quality parameter V/sub m/ of 0.2 /spl mu/m/sup 2/ junctions were 10.5 /spl mu/A and 11 mV, respectively. The R/sub sg//R/sub n/ was 12. The maximum to minimum spread in I/sub c/ of 60 series junctions with areas of 0.5 /spl mu/m/sup 2/ was /spl plusmn/10%.<>

Published in:

IEEE Transactions on Applied Superconductivity  (Volume:5 ,  Issue: 2 )