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Monolithically integrated 10 Gbit=s photodiode and transimpedance amplifier in thin-film SOI CMOS technology

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2 Author(s)
Afzalian, A. ; Microelectron. Lab., Univ. Catholique de Louvain, Louvain-la-Neuve ; Flandre, D.

The first monolithically integrated photodiode and transimpedance amplifier in ultra-thin-film SOI technology for 10 Gbit/s short-distance optical communication is presented. Results indicate performances compatible with the application, at very low power consumption, chip area and cost, using an all-silicon receiver in a 0.13 mum SOI CMOS technology

Published in:

Electronics Letters  (Volume:42 ,  Issue: 24 )