By Topic

A highly Integrated SiGe BiCMOS Class F Power Amplifier for Bluetooth Application

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Jia-liang Chen ; Microwave and Millimeter wave Laboratory, Institute of Communication, National Chiao Tung University, Engineering Building 4th, 1001 Ta Hsueh Road, Hsinchu, Taiwan 300, R.O.C., TEL:886-3-5712121 ext.54591 ; Tang-jung Chiu ; Christina F. Jou

A highly integrated 2.4-GHz class F power amplifier using TSMC 0.35mum 3P3M standard SiGe BiCMOS process is presented. This amplifier integrates both the input matching network and output fundamental and third harmonic loading networks onto the chip. Additional fine tuning output circuit is implemented outside the chip for some flexibility. Measurement results show that the power amplifier can exhibit an output power about 20dBm, with power added efficiency (PAE) of 34.2% at 2.4-GHz Bluetooth frequency band. This result demonstrates the potential of full-scale integration of the high efficiency power amplifier

Published in:

2006 International Symposium on VLSI Design, Automation and Test

Date of Conference:

26-28 April 2006