By Topic

Monolithic Class E SiGe Power Amplifier Design with Wideband High-Efficiency and Linearity

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Lie, D.Y.C. ; Dynamic Res. Corp., San Diego, CA ; Popp, J.D. ; Lee, P. ; Yang, A.H.
more authors

This paper discusses and compares the design of monolithic RF broadband class E SiGe power amplifiers (PAs) centered at 900MHz that are highly efficient and linear. It is found that high power-added-efficiency (~65%) can be achieved with PAs designed using either high-breakdown or high-fT SiGe transistors. The PAs designed with high-breakdown devices can provide ~3% better efficiency at higher supply voltages but with worse bias sensitivity, inferior broadband frequency response, and slightly lower gain than those designed with high-fT devices. However, the class E PAs designed using high-breakdown devices can be successfully linearized using an open-loop envelope tracking (ET) technique as their output spectra pass the stringent EDGE transmit mask with margins, achieving an overall system PAE of 44.4% that surpasses the ~30% PAE obtainable using commercial GaAs class AB PAs. These promising results indicate the feasibility of realizing true single-chip wireless transceivers with on-chip RF SiGe PAs for spectrally-efficient non-constant-envelope modulation schemes

Published in:

VLSI Design, Automation and Test, 2006 International Symposium on

Date of Conference:

26-28 April 2006