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Research of Electro-Thermal Memory Effect of RF Power Amplifier based on LDMOS FET

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3 Author(s)
Feng Yong-sheng ; Coll. of Telecommun. Eng., Beijing Univ. of Posts & Telecommun. ; Liu Yuan-An ; Nan Jing-chang

This paper clarifies the relation of junction temperature of FET and its dissipated power and the essential causation of electro-thermal memory effects due to theoretical analysis, taking the LDMOS RF power amplifier as an example. The impact of electro-thermal memory effect for the performance of RF power amplifier is analyzed by Agilent ADS simulation and measurement. And the method to reduce memory effect is educed on this basis

Published in:

Environmental Electromagnetics, The 2006 4th Asia-Pacific Conference on

Date of Conference:

1-4 Aug. 2006