By Topic

RF Class-D Amplification With Bandpass Sigma–Delta Modulator Drive Signals

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Johnson, T. ; PulseWave RF, Austin, TX ; Stapleton, S.P.

The power efficiency of a RF Class-D amplifier with a bandpass sigma-delta (SigmaDeltaM) modulator is analyzed for a complementary voltage-switched configuration. The modulator broadens the application of the amplifier to include signals with time varying envelopes such as W-CDMA. The addition of a modulator introduces new design variables which affect amplifier power efficiency including coding efficiency and the average transition frequency of the pulse train. Design equations are derived for the optimum load impedance, output power, conduction losses, capacitive switching losses, and drain efficiency. The general design equations are consistent with both periodic and aperiodic drive signals. Analytic and simulated results are compared for an example design with pseudomorphic high-electron mobility transistor and metal-semiconductor field-effect transistor switches with a fourth-order bandpass SigmaDeltaM. The results show a drain efficiency of 52% with a 10-dB peak-to-average power ratio W-CDMA source signal at a frequency of 500 MHz

Published in:

Circuits and Systems I: Regular Papers, IEEE Transactions on  (Volume:53 ,  Issue: 12 )