Cart (Loading....) | Create Account
Close category search window
 

Optical Properties of Composition-Controlled Three-Dimensional Si/Si _{1 - x} Ge _{x} Nanostructures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)

We report the Raman, continuous-wave (CW), and time-resolved photoluminescence (PL) measurements in a series of multilayer Si/Si<formula formulatype="inline"><tex>$_{1 - x}$</tex></formula>Ge<formula formulatype="inline"> <tex>$_{x}$</tex></formula> samples with an island-like morphology and precise control over the chemical composition in the range of 0.096 <formula formulatype="inline"><tex>$le x le$</tex></formula> 0.61. In the samples with <formula formulatype="inline"><tex>$x$</tex></formula> continuously increasing from 0.096 to 0.55, an increase in the intensity of the Raman signal related to the Ge&ndash;Ge vibrations correlates with a red shift in the PL peak position and an increase in the activation energy of the PL thermal quenching. Time-resolved PL measurements reveal 1&ndash;10-ms PL components. The highest observed PL quantum efficiency (better than 1% at low temperature) is found in the samples with <formula formulatype="inline"><tex>$x sim 0.5$</tex></formula>, where the carrier recombination presumably occurs at sharp Si/SiGe interfaces that exhibit type-II band alignment, with a small (to the order of several milli-electron volts) barrier for electrons and deep potential wells for the holes localized within the Ge-rich Si<formula formulatype="inline"><tex>$_{1 - x}$</tex></formula>Ge<formula formulatype="inline"><tex>$_{x}$ </tex></formula> islands. In the samples with Ge concentration close to 0.61, we observe a strong, step-like increase in the strain, and a significant evidence of strain-induced SiGe interdiffusion that results in the decrease in the PL quantum efficiency.

Published in:

Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:12 ,  Issue: 6 )

Date of Publication:

Nov.-dec. 2006

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.