By Topic

Efficiency Improvement of GaN-Based LEDs with ITO Texturing Window Layers Using Natural Lithography

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)

In conventional GaN light-emitting diodes (LEDs), a significant gap exists between the internal and external efficiencies owing to the narrow escape cone for light in high refractive index semiconductors. In this paper, p-side-up GaN/sapphire LEDs with surface-textured indium-tin-oxide (ITO) window layers were investigated using natural lithography with polystyrene spheres as the etching mask. Under optimum etching conditions, the surface roughness of the ITO film can reach 140 nm, while the polystyrene sphere on the textured ITO surface is maintained at about 250–300 nm in diameter. The LEDs fabricated using the surface-textured ITO provided an output power that exceeded that of the planar-surface LED by about 30% and 40% at 20 and 400 mA current injection, respectively. After calculating, the extraction quantum efficiency of ITO/GaN LEDs with and without textured surface is 22.6% and 17.4%, respectively. There is about 5.3% improvement in the extraction quantum efficiency.

Published in:

Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:12 ,  Issue: 6 )