By Topic

Device considerations and modeling for the design of an InP-based MODFET millimeter-wave resistive mixer with superior conversion efficiency

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Lin, E.W. ; TRW Inc., Redondo Beach, CA, USA ; Ku, W.H.

We report on the device considerations for resistive FET mixer applications and discuss the design and fabrication of an optimized InP-based 0.1 μm gate length planar-doped pseudomorphic In0.42 Al0.58As-In0.65Ga0.35As modulation-doped FET (MODFET) well-suited for resistive mixer applications. In addition, we present a general large-signal model suitable for describing the FET in its passive mode of operation to assist in the design and simulation of such mixers. Finally, we discuss the theoretical design of a novel W-band, image-reject resistive mixer based on a large-signal model of our optimized device. The predicted performance of the mixer under +8 dBm of LO drive indicates a minimum conversion loss of 9 dB at 94 GHz, a significant improvement of over 3 dB in comparison to similar GaAs-based mixers, suggesting the potential of InP-based resistive mixer technology to achieve superior conversion loss performance

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:43 ,  Issue: 8 )