Scheduled System Maintenance:
On May 6th, single article purchases and IEEE account management will be unavailable from 8:00 AM - 12:00 PM ET (12:00 - 16:00 UTC). We apologize for the inconvenience.
By Topic

Very Compact High-Gain Broadband Low-Noise Amplifier in InP HEMT Technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Masuda, Satoshi ; Fujitsu Labs. Ltd., Atsugi ; Ohki, T. ; Hirose, Tatsuya

This paper presents the practical design methodology of an InP high electron-mobility transistor broadband low-noise amplifier (LNA) using multilayer transmission lines. The LNA consists of high-pass reactive matching circuits and resistive-feedback circuits in order to achieve both low-noise and broadband characteristics. The fabricated five-stage LNA successfully delivered a 43-dB gain with a noise figure of 1.9 dB at 23 GHz, and a gain of more than 40 dB from 18 to 43 GHz. The maximum gain was 49.5 dB at 32 GHz and the chip size was only 1.8 times 0.9 mm2, resulting in a gain density of 30.5 dB/mm 2. To the best of our knowledge, this gain density is the highest performance in any Ka-band LNA reported to date. In addition, a more compact LNA using spiral inductors was also demonstrated

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:54 ,  Issue: 12 )