Referenced Items are not available for this document.
Two antimonide-based compound semiconductor (ABCS) microstrip monolithic microwave integrated circuits (MMICs), i.e., single- and three-stage ultra-low-power wideband 0.3-11-GHz low-noise amplifiers (LNAs) using 0.1-mum gate-length InAs/AlSb metamorphic high electron-mobility transistors (HEMTs), have been fabricated and characterized on a GaAs substrate. The single-stage wideband LNA demonstrated a typical associated gain of 16 dB (0.3-11 GHz) with less than a 1.7-dB noise figure (2-11 GHz) at 5-mW dc power dissipation, and the three-stage wideband LNA demonstrated a typical associated gain of 30 dB (0.3-11 GHz) with less than a 2.6-dB noise figure (2-11 GHz) at 7.5-mW dc power dissipation. We believe these wideband LNA MMICs demonstrate the lowest dc power consumption with the highest gain-bandwidth product of any MMIC to date. These results demonstrate the outstanding potential of ABCS HEMT technology for ultra-low-power wideband applications
Published in:
Microwave Theory and Techniques, IEEE Transactions on
(Volume:54
,
Issue:
12
)
Date of Publication: Dec. 2006
- Page(s):
- 4448 - 4455
- ISSN :
- 0018-9480
- INSPEC Accession Number:
- 9214413
- Digital Object Identifier :
- 10.1109/TMTT.2006.883604
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 04 December 2006
- Issue Date :
- Dec. 2006
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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