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Low-Loss Differential Semicoaxial Interconnects in CMOS Process

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4 Author(s)
Jun-De Jin ; Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu ; Shawn S. H. Hsu ; Ming-Ta Yang ; Sally Liu

Design, characterization, and modeling of differential semicoaxial interconnects based on a standard 0.18-mum CMOS process are presented for the first time. The differential semicoaxial line shows a low differential-mode attenuation constant of ~1.00 dB/mm at 50 GHz and a slow-wave factor above 3.1 over a wide frequency range. The characteristics of differential semicoaxial lines for differential mode, common mode, slow-wave effect, and coupling effect are also investigated in details based on the measured mixed-mode S-parameters. The lumped RLGC circuit is adopted to model the CMOS differential semicoaxial lines. An excellent agreement between the measured and modeled results is obtained up to 50 GHz

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:54 ,  Issue: 12 )