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High Performance Spiral Inductor on Deep-Trench-Mesh Silicon Substrate

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4 Author(s)
Hsin-Lung Tu ; Dept. of Electr. Eng., Nat. Central Univ., Jhongli ; I. -Shan Chen ; Ping-Chun Yeh ; Hwann-Kaeo Chiou

This letter presented the octagonal spiral inductors on deep-trench-mesh substrate which obtained a high self resonant frequency (fres) and high peak quality factor (Qpeak) in a 0.35-mum 3P3M SiGe BiCMOS process. The main advantages of the deep-trench-mesh structure were twofold: 1) deep-trench-mesh pattern decreased capacitive coupling and increased fres by 10% compared to a conventional structure and 2) decreased resistive losses and increased Qpeak around 15%. The overall figure-of-merit was improved by 28% while dealing with Qpeak, fres, and chip area. Meanwhile, a broad Qpeak frequency response was found in deep-trench-mesh inductors

Published in:

IEEE Microwave and Wireless Components Letters  (Volume:16 ,  Issue: 12 )