High Performance Spiral Inductor on Deep-Trench-Mesh Silicon Substrate

This letter presented the octagonal spiral inductors on deep-trench-mesh substrate which obtained a high self resonant frequency (f
_res
) and high peak quality factor (Q
_peak
) in a 0.35-mum 3P3M SiGe BiCMOS process. The main advantages of the deep-trench-mesh structure were twofold: 1) deep-trench-mesh pattern decreased capacitive coupling and increased f
_res
by 10% compared to a conventional structure and 2) decreased resistive losses and increased Q
_peak
around 15%. The overall figure-of-merit was improved by 28% while dealing with Q
_peak
, f
_res
, and chip area. Meanwhile, a broad Q
_peak
frequency response was found in deep-trench-mesh inductors