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Study of Electrical Stress Effect on SiGe HBT Low-Noise Amplifier Performance by Simulation

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4 Author(s)
Chuanzhao Yu ; Sch. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL ; Jiann-Shiun Yuan ; Shen, J. ; Enjun Xiao

This paper investigates the hot-carrier-induced performance degradation in a cascode low-noise amplifier using SiGe heterojunction bipolar transistors. Changes in device characteristics due to accelerated hot-carrier stress are examined experimentally. The vertical bipolar inter-company (VBIC) model parameters extracted from measured device data before and after stress are used in Cadence SpectreRF simulation to evaluate the circuit performance degradation

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:6 ,  Issue: 4 )

Date of Publication:

Dec. 2006

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