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ESD-Protection Design With Extra Low-Leakage-Current Diode String for RF Circuits in SiGe BiCMOS Process

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3 Author(s)
Ming-Dou Ker ; Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu ; Yuan-Wen Hsiao ; Woei-Lin Wu

Two low-leakage resistor-shunted diode strings are developed for use as power clamps in silicon-germanium (SiGe) BiCMOS technology. The resistors are used to bias the deep N-wells, significantly reducing the leakage current from the diode string. A methodology for selecting the values of the bias resistors is presented. For further reduction of the leakage current, an alternate design is presented: the resistor-shunted trigger bipolar power clamp. The power-clamp circuits presented herein may be used in cooperation with small double diodes at the I/O pins to achieve whole-chip electrostatic-discharge protection for RF ICs in SiGe processes

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:6 ,  Issue: 4 )