System Maintenance Notice:
Single article purchases and IEEE account management are currently unavailable. We apologize for the inconvenience.
By Topic

ESD-Protection Design With Extra Low-Leakage-Current Diode String for RF Circuits in SiGe BiCMOS Process

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Ming-Dou Ker ; Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu ; Yuan-Wen Hsiao ; Woei-Lin Wu

Two low-leakage resistor-shunted diode strings are developed for use as power clamps in silicon-germanium (SiGe) BiCMOS technology. The resistors are used to bias the deep N-wells, significantly reducing the leakage current from the diode string. A methodology for selecting the values of the bias resistors is presented. For further reduction of the leakage current, an alternate design is presented: the resistor-shunted trigger bipolar power clamp. The power-clamp circuits presented herein may be used in cooperation with small double diodes at the I/O pins to achieve whole-chip electrostatic-discharge protection for RF ICs in SiGe processes

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:6 ,  Issue: 4 )