By Topic

Energy and Spatial Distribution of Traps in \hbox {SiO}_{2}/\hbox {Al}_{2}\hbox {O}_{3} nMOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Crupi, I. ; Dipt. di Fisica e Astronomia, Catania Univ. ; Degraeve, R. ; Govoreanu, B. ; Brunco, D.P.
more authors

The energy and spatial profiling of the interface and near-interface traps in n-channel MOSFETs with SiO2/Al2 O3 gate dielectrics is investigated by charge-pumping (CP) measurements. By increasing the amplitude as well as lowering the frequency of the gate pulse, an increase of the charge recombined per cycle was observed, and it was explained by the contributions of additional traps located higher in energy and deeper in position at the SiO2/Al2O3 interface. In addition, CP currents, acquired after different constant voltage stress, have been used to investigate the trap generation in this dielectric stack

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:6 ,  Issue: 4 )