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A Statistical Evaluation of the Field Acceleration Parameter Observed During Time Dependent Dielectric Breakdown Testing of Silica-Based Low-k Interconnect Dielectrics

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3 Author(s)
Jinyoung Kim ; Silicon Technol. Dev., Texas Instrum., Inc., Dallas, TX ; Ogawa, E.T. ; McPherson, J.W.

Extensive time-dependent dielectric breakdown (TDDB) data were taken for several silica-based low-k interconnect dielectrics so that the full statistical-distribution for the field acceleration parameter (gamma) could be determined. The low-k materials tested during this study included: SiOF (k=3.6), SiOCl (k=2.9), SiOC2 (k=2.6) and MSQ (k=2.3). While a strong material-dependence was found for the breakdown strength and time-to-failure, all of these silica-based materials tested at 105degC were observed to have a similar field acceleration parameter of gamma = 4.13 +/- 0.85 cm/MV

Published in:

Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International

Date of Conference:

26-30 March 2006

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