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Ultra-Short-Channel Characteristics of Planar MOSFETs With Block Oxide

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5 Author(s)
Jyi-tsong Lin ; Dept. of Electrical Engineering, National Sun Yat-Sen University (NSYSU EE) 70 Lien-hai Rd. Kaohsiung 804, Taiwan ROC Phone: +886-7-5252000-4122 Fax: +886-7-5254199 Email: jtlin@ee.nsysu.edu.tw ; Yi-chuen Eng ; Kuo-dong Huang ; Tai-yi Lee
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In this work, the investigation of block oxide used in planar MOSFETs has been studied. To solve these above issues and for the comparison, we propose two novel device architectures; one is called the FDSOI with block oxide (bFDSOI) and the other is called the Si on partial insulator with block oxide field-effect transistor (bSPIFET)

Published in:

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits

Date of Conference:

3-7 July 2006