Monolithic integration of a GaInAs p-i-n photodiode and an optical waveguide: modeling and realization using chloride vapor phase epitaxy

A theoretical and experimental study is discussed of a p-i-n GaInAs photodiode integrated with inverted-rib InP or GaInAsP waveguides grown on InP substrate. The coupling efficiency between the waveguide and the photodiode is calculated using the beam-propagation method while the initial condition, i.e. the waveguide eigenmode, is calculated by the finite-difference method. The photodiode absorption is calculated as a function of key design parameters, which are the waveguide dimensions, the wavelength and, in the case of heterostructure waveguide, the composition of the quaternary layer. Two classes of device application are foreseen: monitor photodiode and end line receiver