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Computer-Aided Design Methodology for Electrostatic Discharge (ESD) Protection Applications

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4 Author(s)
Javier A. Salcedo ; Department of Electrical and Computer Engineering, University of Central Florida · Orlando, FL 32816, USA ; Zhiwei Liu ; Juin J. Liou ; James E. Vinson

Physical mechanisms that define the triggering conditions of lateral P1N1-P2N2 structures for ESD (electrostatic discharge) protection are identified using 2D numerical simulations. The TCAD (technology computer aided design) allows for accurate prediction of the forward and reverse blocking voltages, necessary for custom ESD protection design. Symmetrical and asymmetrical dual-polarity S-type I-V characteristics are achieved for bipolar input/output ESD protection design. This is realized by using 1) tailored forward-and reverse- blocking junction configurations embedded in coupled (P1N1-P2N2)//(N 2P3-N3P1) structures, and 2) optimized adjustment of the structures' doping implantations and isolation regions

Published in:

2006 International Caribbean Conference on Devices, Circuits and Systems

Date of Conference:

26-28 April 2006