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Thick-Strained-Si/Relaxed-SiGe Structure of High-Performance RF Power LDMOSFETs for Cellular Handsets

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11 Author(s)
Kondo, M. ; Adv. Analog Technol. Div., Renesas Technol. Corp., Takasaki ; Sugii, N. ; Hoshino, Y. ; Hirasawa, W.
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A strained-Si/relaxed-SiGe structure was applied to laterally diffused MOSFETs (LDMOSFETs) in order to improve the PAE of cellular handset RF power-amplifier applications. The LDMOSFETs were fabricated in a 70-nm-thick strained-Si/relaxed-Si0.85Ge0.15 structure. Despite the appearance of misfit dislocations, the thick strained-Si was essential for high efficiency and low leakage. The self-heating effects on the power performance were estimated to be negligible by using dynamic thermal simulation. The devices exhibited 46.6% PAE at a Pout of 27.5 dBm for wideband code-division multiple-access handset applications, which was a 3.8-point improvement over Si controls

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Electron Devices, IEEE Transactions on  (Volume:53 ,  Issue: 12 )