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CMOS-Compatible SOI MESFETs With High Breakdown Voltage

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6 Author(s)
Joseph Ervin ; Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ ; Asha Balijepalli ; Punarvasu Joshi ; Vadim Kushner
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The authors demonstrate that silicon-on-insulator (SOI) MESFETs can be fabricated alongside SOI CMOS with no changes to the foundry process flow. The MESFETs operate in depletion mode with a threshold voltage of -0.6 V for a gate length of 0.6 mum. The breakdown voltage of the MESFETs greatly exceeds that of the CMOS devices and varies in the range of 12-58 V depending upon the channel access length, i.e., the distance from the edge of the gate to the edge of the drain region. For MESFETs with a gate length of 0.6 mum and an access length of 0.6 mum, the peak cutoff frequency exceeds 7 GHz. The maximum available gain increases with drain bias and values of fmax range from 17 GHz at VDD = 2 V to 22 GHz at VDD = 8 V

Published in:

IEEE Transactions on Electron Devices  (Volume:53 ,  Issue: 12 )