Referenced Items are not available for this document.
The authors demonstrate that silicon-on-insulator (SOI) MESFETs can be fabricated alongside SOI CMOS with no changes to the foundry process flow. The MESFETs operate in depletion mode with a threshold voltage of -0.6 V for a gate length of 0.6 mum. The breakdown voltage of the MESFETs greatly exceeds that of the CMOS devices and varies in the range of 12-58 V depending upon the channel access length, i.e., the distance from the edge of the gate to the edge of the drain region. For MESFETs with a gate length of 0.6 mum and an access length of 0.6 mum, the peak cutoff frequency exceeds 7 GHz. The maximum available gain increases with drain bias and values of fmax range from 17 GHz at VDD = 2 V to 22 GHz at VDD = 8 V
Published in:
Electron Devices, IEEE Transactions on
(Volume:53
,
Issue:
12
)
Date of Publication: Dec. 2006
- Page(s):
- 3129 - 3135
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 9381853
- Digital Object Identifier :
- 10.1109/TED.2006.885530
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 30 November 2006
- Issue Date :
- Dec. 2006
- Sponsored by :
- IEEE Electron Devices Society
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