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At-Bias Extraction of Access Parasitic Resistances in AlGaN/GaN HEMTs: Impact on Device Linearity and Channel Electron Velocity

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2 Author(s)
DiSanto, D.W. ; Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC ; Bolognesi, C.R.

AlGaN/GaN high-electron mobility transistor "hot" parasitic source and drain resistances RS,D are determined under operating biases through wideband S-parameter measurements, without the use of "ColdFET" biasing conditions. Both RS and RD are found to increase dramatically over ColdFET values, both for biases approaching threshold and for open-channel conditions. Parasitic resistance values have a significant effect on the extracted small-signal equivalent circuit model elements, as well as on the apparent device linearity. The bias dependence of access resistances modifies the understanding of the transistor physical operation: A revised delay time analysis accounting for the bias dependence of parasitic resistances shows that the effective average electron velocity in the AlGaN/GaN two-dimensional electron-gas channel is approximately equal to 1.9 times 107 cm/s. This new value of channel velocity is also consistent with the CGS/gMO ratio obtained when the bias dependence of RS and RD is accounted for during the extraction of the transistor small-signal equivalent circuit model

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Electron Devices, IEEE Transactions on  (Volume:53 ,  Issue: 12 )