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A Novel \hbox {Pt/In}_{0.52}\hbox {Al}_{0.48}\hbox {As} Schottky Diode-Type Hydrogen Sensor

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7 Author(s)
Ching-Wen Hung ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan ; Han-Lien Lin ; Huey-Ing Chen ; Yan-Ying Tsai
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On the basis of a Pt/In0.52Al0.48As metal-semiconductor structure, a novel hydrogen sensor is fabricated and demonstrated. The studied Pt/In0.52Al0.48As Schottky diode-type hydrogen sensor exhibits significant sensing performance including high relative sensitivity ratio of about 2600% (under the 1% H2/air gas and VR=-0.5 V at 30 degC), large current variation of 310 muA (under the 1% H2/air gas and VR=-5 V at 200 degC), widespread reverse-voltage regime (0~-5 V), stable hydrogen-sensing current-voltage (I-V) curves, and fast transient response time of 1.5 s. The calculated Schottky barrier-height change and series-resistance variation, from the thermionic-emission model and Norde method, are 87.0 meV and 288 Omega, respectively (under the 1% H2/air gas at 30 degC). The hydrogen concentrations and operating temperatures tested in this letter are in the range of 15 ppm-1% H2/air and 30 degC-250 degC, respectively. Based on the excellent integration compatibility with InP-based electronic devices, the studied device provides the potentiality in high-performance sensor-array applications

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IEEE Electron Device Letters  (Volume:27 ,  Issue: 12 )