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Performance Gain Through Dynamic Control of Device Geometry: Nanoelectromechanical Carbon Nanotube-Based Switch

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2 Author(s)
Engstrom, K.E. ; Dept. of Appl. Phys., Chalmers Univ. of Technol., Goteborg ; Kinaret, J.M.

Performance advantages resulting from a dynamic control of device geometry in a nanoscale nanoelectromechanical systems device are discussed. Specifically, a nanoscale three-terminal carbon nanotube-based relay in a semiclassical analysis is investigated. As an illustration, the authors estimate the optimal subthreshold swing S of the system and find that it can be made superior to that of the ideal MOSFET; values in the range S=20-60mV/dec can be obtained with typical parameter values

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 12 )