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Phosphor-Free GaN-Based Transverse Junction Light Emitting Diodes for the Generation of White Light

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12 Author(s)
Shi, J.-W. ; Inst. of Electro-Opt. Sci. & Eng., Nat. Cheng-Kung Univ., Tainan ; Huang, H.-Y. ; Wang, C.-K. ; Sheu, J.-K.
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We demonstrate a GaN-based phosphor-free near-white-light light-emitting-diode (LED) structure that operates in the visible wavelengths and offers broadening and flattening optical bandwidth performance. The incorporation of GaN-based dual wavelengths (blue and green) multiple-quantum-wells with a transverse p-n junction produces a device which can directly generate stable and near visible white-light emissions. The shape of the optical spectra (440-560 nm) are invariable from low to very high levels of bias currents. The problems of nonuniform carrier distribution and bias dependent electroluminescence spectra that occur in traditional phosphor-free white-light or near-white-light LEDs (with vertical p-n junctions) are eliminated by the demonstrated structure

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Photonics Technology Letters, IEEE  (Volume:18 ,  Issue: 24 )