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Non-uniform carrier accumulation in optical confinement layer as ultimate power limitation in ultra-high-power broad-waveguide pulsed InGaAs/GaAs/AlGaAs laser diodes

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2 Author(s)
Ryvkin, B. ; A.F. Ioffe Physico-Tech. Inst., St.Petersburg ; Avrutin, E.

The effect of spatially non-uniform accumulation of carriers in the optical confinement layer of broad-waveguide InGaAs/GaAs/AlGaAs-based ultra-high power lasers operating at 1.06 mum under very high pulsed pumping has been analysed and shown to be an important limitation for the output power. A calculation using a semi-analytical theory is in good agreement with the recently published experimental data. A narrow asymmetric waveguide laser construction is predicted to alleviate the problem

Published in:

Electronics Letters  (Volume:42 ,  Issue: 22 )