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Observation and Modeling of a Room-Temperature Negative Characteristic Temperature 1.3- \mu m p-Type Modulation-Doped Quantum-Dot Laser

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7 Author(s)
Chao-Yuan Jin ; Dept. of Electron. & Electr. Eng., Univ. of Sheffield ; Badcock, T.J. ; Hui-Yun Liu ; Groom, K.M.
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A room-temperature negative characteristic temperature (T0 ) and ultralow threshold current density (Jth) of 48 Amiddotcm-2 are demonstrated for a 1.3-mum InAs quantum dot laser. These characteristics are obtained by combining a high-growth-temperature GaAs spacer layer with p-type modulation doping of the quantum dots in multiple layer dot-in-a-well structures. Through a comparison of p-doped and undoped devices, a photon coupling mechanism is proposed to account for the different temperature dependences of Jth for the two devices. Numerical simulations based on a rate equation model, which includes photon coupling between ground and excited quantum dot states, are performed. The simulations are able to account for the very different temperature-dependent Jth behavior of the doped and undoped device

Published in:

Quantum Electronics, IEEE Journal of  (Volume:42 ,  Issue: 12 )

Date of Publication:

Dec. 2006

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