Referenced Items are not available for this document.
InGaAs-InP charge-compensated unitraveling-carrier photodiodes with thick depletion region are demonstrated. A 40-mum-diameter photodiode achieved 10-GHz bandwidth and 24.5dBm RF output power. A 100-mum-diameter photodiode achieved bandwidth of 2 GHz and 29 dBm RF output power. Simulation of the temperature distribution in devices is also presented
Published in:
Quantum Electronics, IEEE Journal of
(Volume:42
,
Issue:
12
)
Date of Publication: Dec. 2006
- Page(s):
- 1255 - 1258
- ISSN :
- 0018-9197
- INSPEC Accession Number:
- 9214482
- Digital Object Identifier :
- 10.1109/JQE.2006.883498
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 20 November 2006
- Issue Date :
- Dec. 2006
- Sponsored by :
- IEEE Photonics Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
