This paper proposes a method to improve the non-linearity of the differential RF signals, the noise figure and conversion gain in the existing micromixer through inserting a transistor that is connected in diode form in the mirrored RF branch. These improvements are demonstrated by three micromixers designed at different frequency bands. A 77 GHz micromixer in 0.25 mum SiGe:C BiCMOS technology using the proposed method is fabricated and measured. Additionally, current injection technique is applied in the circuit to increase gain and reduce power consumption. 13.4 dB gain, 18.4 dB NF and 1.4 dBm OP1dB are achieved with 176 mW power consumption at 4.5 V. To the authors' knowledge, this is the first reported 77 GHz micromixer
Published in:
Microwave Symposium Digest, 2006. IEEE MTT-S International
Date of Conference: 11-16 June 2006