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Device Analysis of Linearity in RF Power Devices by Harmonic Balance Device Simulation

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3 Author(s)
Tornblad, O. ; Infineon Technol., North America Corp., Morgan Hill, CA ; Ma, G. ; Dutton, R.W.

Low distortion is one of the most important concerns for current and next-generation wireless communication systems. In this work, the linearity of RF power MOS devices are analysed by using a unique harmonic balance device simulator. Sweet-spots in the third order intermodulation distortion product (IM3) were investigated and interpreted in terms of bias and device design parameters. The demonstrated methodology helps in laying ground-work for improved device design and investigation of new device concepts for improved linearity

Published in:
Microwave Symposium Digest, 2006. IEEE MTT-S International

Date of Conference: 11-16 June 2006

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