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Performance and RF Reliability of GaN-on-SiC HEMT's using Dual-Gate Architectures

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9 Author(s)
Vetury, R. ; RF Micro Devices, Charlotte, NC ; Shealy, J.B. ; Green, D.S. ; McKenna, J.
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AlGaN/GaN HEMTs on SiC have been fabricated with dual and single gate device geometries. Subthreshold characteristics and drain bias dependence of large signal parameters were compared to identify differences in electric field. Degradation under RF stress reveals the relative impact of temperature and electric field. The results illustrate the beneficial effects of the dual gate geometry for performance and reliability

Published in:

Microwave Symposium Digest, 2006. IEEE MTT-S International

Date of Conference:

11-16 June 2006

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