By Topic

C-type and R-type RF MEMS Switches for Redundancy Switch Matrix Applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
M. Daneshmand ; University of Waterloo, Waterloo, Ontario, Canada, N2L3G1 ; R. R. Mansour

The objective of this paper is to investigate novel configurations of planar multi-port RF MEMS C-type and R-type switches as basic building blocks of redundancy switch matrices for satellite communications. An in house monolithic fabrication process dedicated to electrostatic multi-port RF MEMS switches is developed and fine tuned. The proposed C-type switch is a four port device with two operational states. This switch illustrates an insertion loss of less than 0.3dB and isolation of about 25dB at satellite C band frequency range. The novel R-type switch is also a four port device with an additional operational state that could drastically reduce the number of required switch elements (up to 50%) in a redundancy switch matrix. The measured results show an insertion loss of better than 0.4dB and isolation of better than 25dB at C-band. This is the first time that an R-type RF MEMS switch is ever reported

Published in:

2006 IEEE MTT-S International Microwave Symposium Digest

Date of Conference:

11-16 June 2006