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A + 31.5 dBm CMOS RF Doherty Power Amplifier for Wireless Communications

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3 Author(s)
Wongkomet, N. ; Marvell Semicond., Santa Clara, CA ; Tee, L. ; Gray, P.R.

A fully differential Doherty power amplifier (PA) is implemented in a 0.13-mum CMOS technology. The prototype achieves a maximum output power of +31.5 dBm with a peak power-added efficiency (PAE) of 36% (39% drain efficiency) with a GMSK modulated signal. The PAE is kept above 18% over a 10 dB range of output power. With a GSM/EDGE input signal, the measured peak output power while still meeting the GSM/EDGE mask and error vector magnitude (EVM) requirements is +25dBm with a peak PAE of 13% (PAE is 6% at 12 dB back-off). Instead of using a bulky lambda/4 transmission line, a passive impedance inverter is implemented as a compact lumped-element network. All circuit components are fully integrated on a single CMOS die except for an off-chip capacitor for output matching and baluns. The die size is 2.8times3.2mm2 including all pads and bypass capacitors

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:41 ,  Issue: 12 )