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Enhanced Light Output in Roughened GaN-Based Light-Emitting Diodes Using Electrodeless Photoelectrochemical Etching

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6 Author(s)
Shun-Cheng Hsu ; Dept. of Electr. Eng., Nat. Chung Hsing Univ., Taichung ; Lee, Chong-Yi ; Jung-Min Hwang ; Juh-Yuh Su
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We have demonstrated enhanced output power from roughened GaN-based light-emitting diodes (LEDs) by using electrodeless photoelectrochemical etching with a chopped source (ELPEC-CS etching). It was found that the 20-mA output power of the ELPEC-CS treated LED (with roughened surfaces on the top p-type and bottom n-type GaN surface as well as the mesa sidewall) was 1.41 and 2.57 times as high as those LEDs with a roughened p-type GaN surface and a conventional surface, respectively. The light output pattern of the ELPEC-CS treated LED was five times greater than the conventional LED at 0deg which was caused by the roughened GaN surface that improved the light extraction efficiency of the LED

Published in:

Photonics Technology Letters, IEEE  (Volume:18 ,  Issue: 23 )