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Real index-guided AlGaInP visible laser with high-bandgap energy AlInP current blocking layer grown by HCl-assisted metalorganic vapor phase epitaxy

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5 Author(s)
Kobayashi, R. ; Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan ; Hotta, H. ; Miyasaka, F. ; Hara, K.
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We establish selective area growth of AlxIn1-x P and develop a high power 685-nm real index-guided AlGaInP visible laser for the first time. This laser has a high-bandgap energy Al0.5In0.5P current blocking layer, which is selectively grown by HCl-assisted metalorganic vapor phase epitaxy (MOVPE). Threshold current is reduced and slope efficiency is improved, compared with conventional lasers with GaAs current blocking layers. The threshold current and slope efficiency for a real index guided AlGaInP laser are 36 mA and 1.0 W/A, with a cavity length of 710 μm. Fundamental transverse mode operation up to 50 mW, and CW operation over 55 mW at 25°C, without any kinks in the light output power versus current curve, are achieved. This laser is operated stably for more than 1000 hours at 30 mW constant output power, at 50°C

Published in:

Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:1 ,  Issue: 2 )

Date of Publication:

Jun 1995

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