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DC and Dynamic Characteristics of P-Doped and Tunnel Injection 1.65- \mu{\hbox {m}} InAs Quantum-Dash Lasers Grown on InP (001)

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2 Author(s)
Mi, Z. ; Solid-State Electron. Lab., Michigan Univ., Ann Arbor, MI ; Bhattacharya, Pallab

We have studied the characteristics of 1.65-mum InAs self-organized quantum-dash lasers grown on InP (001) substrates, wherein special techniques of p-doping of quantum dashes and tunnel injection are incorporated for the first time. We measured a very large T0 (196 K) in p-doped quantum-dash lasers, accompanied by an increase in threshold current density (Jth~1600 A/cm2 ), compared to the undoped quantum-dash lasers (T0=76 K and Jth~950 A/cm2). The p-doped lasers exhibit a maximum 3-dB bandwidth of 8 GHz, chirp ~1.0 Aring, and alpha-parameter ~1.0 (measured at subthreshold bias conditions) at a temperature of 278 K. Similar undoped quantum-dash lasers exhibit a 3-dB bandwidth of 6 GHz. A self-consistent model, that includes Auger recombination in quantum dashes, is developed to calculate the threshold current at various temperatures. A comparison of the calculated threshold current and T0 with measured values reveals that Auger recombination in quantum dashes plays a major role in determining the values of threshold current and T0 in both undoped and p-doped quantum-dash lasers. While p-doping increases the gain and differential gain, the presence of wetting layer states, the relatively large inhomogeneous broadening of quantum dashes, and the substantially increased Auger recombination upon p-doping severely limit the potential benefits. Superior characteristics, including large modulation bandwidth (f-3 dB~12 GHz), near-zero alpha-parameter, and very low chirp (~0.3 Aring), are achieved when the technique of tunnel injection is also utilized

Published in:

Quantum Electronics, IEEE Journal of  (Volume:42 ,  Issue: 12 )

Date of Publication:

Nov. 2006

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