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Very high characteristic temperature and constant differential quantum efficiency 1.3-μm GaInAsP-InP strained-layer quantum-well lasers by use of temperature dependent reflectivity (TDR) mirror

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4 Author(s)
Kasukawa, A. ; Res. & Dev. Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan ; Iwai, N. ; Yamanaka, N. ; Yokouchi, N.

A very high characteristic temperature T0 of 150 K (25-70°C) or 450 K (25-50°C) and an almost constant differential quantum efficiency operation in the temperature range of 25-70°C were achieved in 1.3-μm GaInAsP-InP strained-layer quantum-well (SL-QW) lasers by use of a novel temperature dependent reflectivity (TDR) mirror composed of multiple quarter-lambda thickness α-Si-SiOx dielectric films with quarter-lambda shift in the vicinity of center portion, The mechanism of high T0 and constant differential quantum efficiency were explained using the structural parameters, transparent current density and gain coefficient of a SL-QW laser that are derived experimentally. The effect of TDR mirror was confirmed by measuring the temperature dependence of net gain of a SL-QW laser with TDR mirror. It was found that less temperature dependent net gain due to the decrease of mirror loss with temperature played an important role for improving the temperature characteristics of threshold current. Almost constant differential quantum efficiency over a wide temperature range is attributed to the increase of the facet reflectivity with temperature

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:1 ,  Issue: 2 )