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Theoretical analysis of high-temperature characteristics of 1.3-μm InP-based quantum-well lasers

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3 Author(s)
Seki, Shunji ; NTT Opto-Electron. Labs., Kanagawa, Japan ; Yokoyama, K. ; Sotirelis, P.

By taking into account the electrostatic deformation in the band profiles and the temperature dependence of the optical dephasing time, we study the temperature sensitivity of the differential gain, threshold carrier density, and radiative current density in 1.3-μm InP-based strained-layer quantum-well (QW) lasers. Electrostatic deformation is analyzed by the self-consistent numerical calculation of Poisson's equation, the scalar effective-mass equation for the conduction band, and the multiband effective-mass equation for the valence band. The optical dephasing time is then obtained from the intrasubband scattering rates for electrons and holes within the fully dynamic random phase approximation including carrier-carrier and carrier-phonon interactions on an equal basis. It is clarified that the electrostatic band-profile deformation is one of the dominant mechanisms For determining the temperature sensitivity Of the differential gain, while the optical dephasing time has a pronounced influence on the transparent condition at elevated temperatures. We demonstrate that the electrostatic band-profile deformation and the temperature-dependent optical dephasing play essential roles in determining the high-temperature characteristics of InP-based QW lasers

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:1 ,  Issue: 2 )