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A study of the temperature sensitivity of GaAs-(Al,Ga)As multiple quantum-well GRINSCH lasers

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6 Author(s)
Dion, M. ; Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada ; Li, Z.‐M. ; Ross, D. ; Chatenoud, F.
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We have measured the temperature sensitivity, T0, of GaAs-(Al,Ga)As, GRINSCH, multiple quantum-well (MQW) lasers with different numbers of quantum wells ranging from one to ten. Our data suggests that there is an optimum number of wells, namely five, where T 0 is highest. Using a temperature-dependent model based on drift-diffusion equations, we have systematically analyzed the temperature sensitivity of a MQW GaAs-(Al, Ga)As laser. The T0 versus well-number behavior observed experimentally is verified, and the important temperature-dependent factors are identified

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:1 ,  Issue: 2 )