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The dependence of optical properties on crystal orientation is analyzed for long wavelength strained quantum-well (QW) GaAsP-InGaAsP lasers. The calculation is based on the multiband effective mass theory which enables us to consider the anisotropy and the nonparabolicity of the valence-band dispersions. It is found that the optical gain increases as the crystal orientation is inclined from (001) toward (110). This is due to the reduced valence-band density of states. The differential gain is about 1.6 times larger for the (110)-oriented 1.55-μm strained QW's than for equivalent (001)-oriented QW's. It is also shown that the threshold current density in 1.3-μm strained QW lasers decreases to two-thirds of that in the (001)-oriented laser as the orientation is inclined away from (001) by 40°-90
Published in:
Selected Topics in Quantum Electronics, IEEE Journal of
(Volume:1
,
Issue:
2
)
Date of Publication: Jun 1995
- Page(s):
- 211 - 217
- ISSN :
- 1077-260X
- INSPEC Accession Number:
- 5012071
- Digital Object Identifier :
- 10.1109/2944.401199
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jun 1995
- Sponsored by :
- IEEE Photonics Society
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